[A-0-1]Charge Trapping in Thermal Silicon Dioxide
D. J. DiMaria(1.IBM Thomas J. Watson Research Center)
1978 Conference on Solid State Devices
1978年8月29日〜8月30日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1978 Conference on Solid State Devices
1978年8月29日〜8月30日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(57)
[A-1-1]A VMOS 16K-BIT EPROM
F. B. Jenne'、S. S. Nance、D. A. Draper、W. K. Wu、B. L. Bateman、T. J. Rodgers(1.American Microsystems, Inc.)
[A-1-2]N-channel Si-gate MNOS Device for High Speed EAROM
Yuji Yatsuda、Takaaki Hagiwara、Ryuji Kondo、Shinichi Minami、Yokichi Itoh(1.Central Research Laboratory, Hitachi Ltd.)
[A-1-3]Suppression of Anomalous Drain Current in Short Channel MOSFET
Masami Konaka、Hiroshi Iwai、Yoshio Nishi(1.Research Laboratory, NEC-TOSHIBA Information Systems Inc.)
[A-1-4]Novel High Density, Stacked Capacitor MOS RAM
Mitsumasa Koyanagi、Norikazu Hashimoto(1.Central Rearch Laboratory, Hitachi Ltd.)
[A-2-1]An Isolation Structure and Layout of The Buried Oxide CMOS-IC
Junji Sakurai(1.Fujitsu Limited)
[A-2-2]A 4K CMOS/SOS Static RAM with Weak Depletion Lambda Diode Cells
Tetsuya Iizuka、Takayuki Ohtani、Tai Sato、Hiroyuki Tango(1.Toshiba Research and Development Center, Toshiba Electric Co., Ltd.)
[A-2-3]A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology
N. Sasaki、R. Togei、Y. Kobayashi、T. Iwai、M. Nakano(1.IC Division, Fujitsu Limited)
[A-2-4]A 16-bit microprocessor on SOS -PULCE-
J. IWAMURA、M. OHHASHI、M. ISOBE、M. HANADA、E. SUGINO、K. MAEGUCHI、T. SATO、H. TANGO(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-3-1]High Packing Density, High Speed CMOS(Hi-CMOS) Device Technology
Yoshio Sakai、Toshiaki Masuhara、Osamu Minato、Norikazu Hashimoto(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-2]High Speed 1 K Bit Static RAM using DSA MOST's
K. Kobayashi、M. Saitoh、Y. Murao、K. Takahashi(1.IC Division, Central Research Labs., Nippon Electric Co., Ltd.)
[A-3-3]A 64K Dynamic MOS-RAM Using Short-Channel, Channel-Dope Technology
Toshio WADA、Masahide TAKADA、Mitsuru SAKAMOTO、Osamu KUDOH、Shunichi SUZUKI、Shigeki MATSUE(1.Nippon Electric Co., Ltd.)
[A-3-4]A High Speed I2L 1K Static RAM with 20 ns Access Time
S. Kato、K. Murakami、M. Ueda、Y. Horiba、T. Nakano(1.Mitsubishi Electric Corporation)
[B-1-1]CHARACTERIZATION OF PLASMA-DEPOSITED AMORPHOUS Si:H THIN FILMS
John C. Knights(1.Xerox Palo Alto Research Center)
[B-1-2]Determination of Localized State Density Distribution in Glow Discharge Amorphous Silicon
M. Hirose、T. Suzuki、G. H. Doehler、H. Mell(1.Max-Planck-Institut fuer Festkoerperforschung、2.Fachbereich Physik der Philipps-Universitaet)
[B-1-3]Epitaxial Solar Cells on Refined Metallurgical-Grade Silicon
T. Warabisako、T. Saitoh、S. Matsubara、N. Nakamura、H. Itoh、T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[B-1-4]Low-Cost High-Efficiency SnO2/n+-p Si Heteroface Solar Cell
H. Takakura、Y. Hamakawa(1.Faculty of Engineering Science, Osaka University)
[B-2-1]GaAs Passivation and MOS Devices
T. Ikoma、H. Yokomizo、H. Tokuda(1.Institute of Industrial Science, University of Tokyo)
[B-2-2]GaAs Integrated Logic with Normally-Off MESFETs
K. Suyama、H. Kusakawa、M. Fukuta(1.Fujitsu Laboratories Ltd.)
[B-3-1]Growth and Perfection of Silicon Crystals
Jun-ichi Chikawa、Shozo Shirai、Fumio Sato(1.NHK Broadcasting Science Research Laboratory)
[B-3-2]Contactless Measurement of Semiconductor Mobility, Conductivity and Carrier concentration
Fumio HORIGUCHI、Hideki MATSUMURA、Seijiro FURUKAWA、Hiroshi ISHIWARA(1.Department of Applied Electronics Tokyo Institute of Technology)
[B-3-3]Photoluminescence Observation of Defects in Silicon
Hisao NAKASHIMA、Yasuhiro SHIRAKI(1.Central Research Laboratory, Hitachi Ltd.)
[B-3-4]STACKING FAULTS FROM OXIDE PRECIPITATES IN CZ SILICON
Hidetoshi Takaoka、Jiro Oosaka、Naohisa Inoue(1.Musashino Electrical Communication Laboratory, NTT)
[C-1-1]Experimental Integration Technology for Josephson Tunneling Switching Devices
A. Ishida、K. Kuroda、T. Waho、H. Yamada(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[C-1-2]Properties of cross-shaped proximity effect weak link device
Tadayuki Kobayashi、Tsutomu Yamashita、Yutaka Onodera(1.Sendai Radio Technical College.、2.Res. Inst. of Elect. Commun. Tohoku Univ.)
[C-1-3]Fabrication of Niobium Weak Links by means of Electron Beam Lithography and Ion Implantation
K. Gamo、A. Kajiya、S. Namba(1.Faculty of Engineering Science, Osaka University)
[C-2-1]Variable Surface Acoustic Wave Delay Line Consisting of a Magnetic Thin Film on a LiNbO3 Substrate
H. Yamamoto、M. Naoe、S. Yamanaka、M. Yamaguchi、H. Kogo(1.Faculty of Engineering, Tokyo Institute of Technology、2.Faculty of Engineering, Chiba University)
[C-2-2]Acoustoelectric Real Time Correlator
L. Rosenheck、H. Schachter、W. C. Wang(1.Department of Electrical Engineering Polytechnic Institute of New York)
[C-2-3]High Rate Deposition of ZnO Film Using Improved DC Reactive Magnetron Sputtering Technique
Tomonobu Hata、Toshiharu Minamikawa、Etsuji Noda、Toshio Hada(1.Faculty of Technology, Kanazawa University)
[C-2-4]Characterization of 1.5 μm Bubble Devices built on low Magnetization Garnet Films for alleviating Drive Fields
H. Inoue、K. Asama、K. Komenou、K. Kashiro(1.FUJITSU LABORATORIES LTD.)
[C-2-5]Stability of Small Bits Written in Amorphous GdCo Thin Films
Yuji Togami(1.NHK Broadcasting Science Research Laboratories)
[A-4-1]Mo-gate MOS Metallization System
H. Yanagawa、T. Amazawa、H. Oikawa(1.Musashino Electrical Communication Laboratory, NTT)
[A-4-2]Application of High Current Arsenic Ion Implantation to Dynamic MOS memory LSI's
Yasuo Wada、Shigeru Nishimatsu(1.Central Research Laboratory, Hitachi, Ltd.)
[A-4-3]Selective Oxide Coating of Silicon Gate (SELOCS)
Hideo Sunami、Mitsumasa Koyanagi(1.Central Research Laboratory, Hitachi Ltd.)
[A-5-1]A NEW FIELD ISOLATION TECHNOLOGY FOR HIGH DENSITY MOS LSI
Tadashi SHIBATA、Susumu KOHYAMA、Hisakazu IIZUKA(1.TOSHIBA Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-5-2]Deep Levels Introduced by Iron Implantation in N-Type Silicon and Its Application to Switching Devices
H. Hayashi、T. Mamine、T. Matsushita、O. Kumagai、K. Nishiyama、K. Kaneko(1.SONY Corporation Semiconductor Development Division and Research Center)
[A-5-3]Plasma Etching Monitor by Electric Probe
Yoshifumi Kawamoto、Norikazu Hashimoto(1.Central Research Laboratory, Hitachi, Ltd.)
[A-5-4]Application of IPOS technique to MOS IC
Kazuo Imai、Yutaka Yoriume(1.Electrical Communication Laboratories, Nippon Tel. & Tel. Public Corp.)
[A-6-1]Electron Beam Lithography in Practical Use for Integrated Circuits
Yoshiyuki Takeishi、Shun-ichi Sano(1.Cooperative Laboratories, VLSI Technology Research Association)
[A-6-2]Direct Electron Beam Data Writing Technology for 128K EB-ROM
E. Arai、T. Ogawa、N. Ieda、K. Kiuchi、K. Iwadate、K. Takeya(1.Musashino Electrical Communication Laboratory, NTT)
[A-6-3]An Electron Beam Exposure System (VL-RI)
M. Sumi、M. Ninomiya、F. Chiba、M. Nakasuji、S. Sano、Y. Takeishi(1.Cooperative Laboratories, VLSI Technology Research Association)
[A-6-4]MOS LSI Fabrication Process Using Direct Electron Beam Writing
Y. Sakakibara、E. Arai、H. Yoshino、T. Kobayashi、H. Akiya、K. Hirata(1.Musashino Electrical Communication Laboratory, NTT)
[A-6-5]Monte Carlo Simulation of Alignment Mark Signal for Direct Electron-Beam Writing
Naoaki Aizaki(1.Cooperative Laboratories, VLSI Technology Research Association)
[A-7-1]A NEW BIPOLAR TRANSISTOR WITH GATES PROJECTED INTO COLLECTOR REGION
Hisao KONDO、Mikio BESSHO、Yoshinori YUKIMOTO(1.Semiconductor Laboratory, Mitsubishi Electric Corporation)
[A-7-2]A 380Hx488V CCD Imager with Narrow Channel Transfer Gates
Yoshiaki Daimon-Hagiwara、Motoaki Abe(1.Sony Corporation Research Center, Semiconductor Development Division)
[B-4-1]Macroscopic Theory of Injection Lasers
Y. Suematsu M. Yamada(1.Tokyo Institute of Technology、2.Kanazawa University)
[B-4-2]GaAs ACOUSTIC DISTRIBUTED FEEDBACK LASERS
M. YAMANISHI、T. KAWAMURA、K. TSUBOUCHI、N. MIKOSHIBA(1.Department of Electrical Engineering, University of Osaka Prefecture、2.Research Institute of Electrical Communication, Tohoku University)
[B-5-1]The Elimination of Contact Degradation in Lead-Salt Diode Lasers
Wayne Lo(1.Physics Department, General Motors Research Laboratories)
[B-5-2]High temperature single-mode cw operation with a TJS laser using a semi-insulating GaAs substrate
H. Kumabe、T. Tanaka、H. Namizaki、S. Takamiya、W. Susaki(1.Semiconductor Laboratory, Mitsubishi Electric Corporation)
[B-5-3]Influence of Ambient Gas on the PL Intensity from InP and GaAs
H. Nagai、Y. Noguchi、Y. Mizushima(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
57 件中 ( 1 - 50 )
- 1