Session Details

[22a-B202-1~9]13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 22, 2023 9:00 AM - 11:30 AM JST
Fri. Sep 22, 2023 12:00 AM - 2:30 AM UTC
B202 (Civic Auditorium)
Yoshikazu Terai(Kyushu Inst. of Tech.), Yuji Ohishi(Osaka University)

[22a-B202-1]Characterization of 2-inch Mg2Si bulk crystals grown by VB method

〇Haruhiko Udono1, Tsubasa Umehara1, Yusei Kimura1, Shunya Sakane1 (1.Ibaraki Univ.)

[22a-B202-2]Evaluation of carrier density in Mg2Si bulk substrate by 4-point probe method

〇Kaito Ojima1, Tatsuya Uematsu1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[22a-B202-3]Study on Design of the Anti-Refection Coating for the Mg2Si Short Wavelength Infrared Sensor

〇(D)Xuanwei Zhang1, Kana Ueda1, Naoki Imaizumi2, Kyoko Namura1, Haruhiko Udono2, Motofumi Suzuki1 (1.Kyoto Univ., 2.Ibaraki Univ.)

[22a-B202-4]Microfabrication and characterization of Mg2Si-PDs on Mg2Si substrate for
SWIR image sensor

〇Naoki Imaizumi1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[22a-B202-5]R&D of Bulk Crystals and Devices for Mass Production Mg2Si Image Sensors

〇Naoyoshi Komatsu1, Etsuro Shimizu1 (1.Kyocera Corp.)

[22a-B202-6]Optimization of Structural Parameters of Si/Mg2Si Heterojunction Photodiodes Using Device Simulation

〇(M1)Keisuke Asano1, Katsumata Hiroshi1 (1.Meiji Univ.)

[22a-B202-7]Fabrication of Photodiodes Using p-type Mg2Si1-xSnx Thin Films and Their Characterizations

〇(M2)Yuto Hida1, Hiroshi Katsumata1 (1.Meiji Univ.)

[22a-B202-8]Evaluation of I-V characteristics of Mg2Si photodiodes for thermo-photovoltaic power generation

〇Daisuke Miyago1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[22a-B202-9]Development of HP-SPS apparatus and physical properties of Mg2Si thermoelectric materials synthesized by this apparatus

〇YOSHIHISA Mori1, KENGO Nakai1, DAISUKE Yamazaki2, TAKASHI Yoshino2 (1.Okayama Univ. of Sci., 2.Okayama Univ.)