Session Details

[22a-C501-1~8]22.1 Joint Session M "Phonon Engineering"

Fri. Sep 22, 2023 9:30 AM - 11:45 AM JST
Fri. Sep 22, 2023 12:30 AM - 2:45 AM UTC
C501 (Int'l Ctr.)
Masahiro Nomura(Univ. of Tokyo), Toshio Baba(JST)

[22a-C501-1]Heat Physical Properties by Three-Dimensional Self-Ordered Multilayered SiGe Nanodots

〇Ryo Yokogawa1,2, Sho Sugawa1, Yuiha Maeda1, Yuta Ito1, Yuichiro Yamashita3, Wei-Chen Wen4, Yuji Yamamoto4, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.AIST, 4.IHP)

[22a-C501-2]Thermal Conductivity Measurement of SiGe Nanowire by Raman Spectroscopy

〇Sho Sugawa1, Ryo Yokogawa1,2, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL)

[22a-C501-3]Effect of nanostructuring on thermoelectric performance in SiGe thin film

〇Sota Koike1, Ryoto Yanagisawa1, Masashi Kurosawa2, Rajveer Jha3, Naohito Tsujii3, Takao Mori3, Masahiro Nomura1 (1.IIS Univ. of Tokyo, 2.Nagoya Univ., 3.NIMS)

[22a-C501-4]Low Thermal Conductivity in Si-Ge-Sn-O Quaternary Amorphous Thin Films

〇(PC)Kunihiko Shizume1, Sasaki Michiko1,2, Goto Masahiro2, Shiomi Junichiro1 (1.UTokyo, 2.NIMS)

[22a-C501-5]Development of High Performance Thermal Diode Using Phase Transformation of Silver Chalcogenides

〇Yusuke Goto1, Keisuke Hirata1, Masaharu Matsunami1, Tsunehiro Takeuchi1 (1.TTI)

[22a-C501-6]Development of lateral thermal switching devices operable on bias voltage

〇(M1)Reiji Toida1, Masaharu Matsunami1, Tsunehiro Takeuchi1 (1.Toyota Tech. Inst.)

[22a-C501-7]Development of M-Si-N-Te(M=Transition Metal Elements) Nitride Film with Low Lattice Thermal Conductivity

〇Masaki Adachi1, Toshiaki Fujita1 (1.Mitsubishi Materials Corp.)

[22a-C501-8]Phonon Propagation between Superconducting Devices on the Surface of SiO2/Si Substrate

〇(M1)Tatsuya Iizuka1, Yoshinao Mizugaki1, Hiroshi Shimada1 (1.UEC)