The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[18a-A24-1~9]13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 18, 2024 9:00 AM - 11:30 AM JST
Wed. Sep 18, 2024 12:00 AM - 2:30 AM UTC
A24 (TOKI MESSE 2F)
Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-A24-1]Exploration of growth conditions for epitaxial Mg3Bi2 thin films on c-Al2O3 substrates

〇(D)Akito Ayukawa1, Takeru Kuriyama1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-A24-2]Fabrication of epitaxial Mg3Sb2 thin films on Si(001) substrates by codeposition

〇Nozomu Kiridoshi1, Akito Ayukawa1, Wakaba Yamamoto2, Akira Yasuhara2, Kohei Satou2, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ., 2.JEOL)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-A24-3]Deposition of AgBa2Si3 films for thermoelectric applications and search for dopants by first-principles calculations

〇Kimimaru Kajihara1, Takamitsu Ishiyama1, Kaoru Toko1, Yoichiro Koda2, Masami Mesuda2, Shuta Honda3, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corporation, 3.Kansai Univ)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[18a-A24-4]Synthesis of Na-Cu-Ge ternary clathrates in film form

〇(D)Tun Naing Aye1, Koji Yasuoka1, Kumar Rahul2, S. Himanshu Jha1, Fumitaka Ohashi1, Tetsuji Kume1 (1.Gifu University, 2.Nationational Institute ofTechnology, Gifu)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-A24-5]Mechanochemically assisted close-spaced evaporation of CaSi2 films

〇Ryota Takagaki1, Keisuke Arimoto1, Junji Yamanaka1, Kosuke Hara1 (1.Univ. of Yamanashi)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[18a-A24-6]Annealing effect of the conducting behavior of the bulk single crystals of InGaO3(ZnO)n

〇Naoki Kase1, Tadahito Inoue1, Yuto Uruma1, Keita Tanaka1, Yusuke Kawamura1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-A24-7]Sn substitution effect on (InGaO3)m(ZnO)nsingle crystals

〇Ryotaro Kokai1, Tadahito Inoue1, Yuto Uruma1, Naoki Kase1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-A24-8]Effect of crucible shape on Mg2Si single crystal growth

〇Kota Asakura1, Xin Liu1, Haruhiko Udono2, Noritaka Usami1 (1.Grad. Eng. Nagoya Univ., 2.Grad. Sci. and Eng. Ibaraki Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-A24-9]Raman spectroscopic measurements of impurity-doped Mg2Si single crystals

〇Kosuke Shimano1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)
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