Session Details
[18a-W9_324-1~9]KS.1 Solid State Quantum Sensor Group
Wed. Mar 18, 2026 9:00 AM - 12:00 PM JST
Wed. Mar 18, 2026 12:00 AM - 3:00 AM UTC
Wed. Mar 18, 2026 12:00 AM - 3:00 AM UTC
W9_324 (West Bldg. 9)
[18a-W9_324-1][Solid State Quantum Sensor Group Session Invited Talk] Exploration and Clarification of Color Centers in SiC through Theoretical and Experimental Approaches
〇Takuma Kobayashi1, Sosuke Iwamoto1, Kentaro Onishi1, Takato Nakanuma1, Yu Kaneko1, Haruko Toyama2, Kosuke Tahara2, Katsuhiro Kutsuki2, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka, 2.Toyota CRDL)
[18a-W9_324-2][The 47th Paper Award Speech] Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4
〇Manato Kawahara1,2, Yuichiro Abe1,2, Koki Takano1,2, F.Joseph Heremans3,4, Jun Ishihara5, Sean Sullivan3, Christian Vorwerk4, Vrindaa Somjit4, Christopher Anderson6, Gary Wolfowicz3, Makoto Kohda2,7,8,9, Shunsuke Fukami1,2,8,10,11,12, Giulia Galli3,4,13, David Awschalom3,4,14, Hideo Ohno1,8,10,11, Shun Kanai1,2,7,8,10,15 (1.LNS, RIEC, 2.Dept. Electron. Eng., Tohoku Univ., 3.MSD, Argonne National Lab., 4.PME, Univ. of Chicago, 5.Dept. Mater. Sci., Tohoku Univ., 6.Dept. Mater. Sci., Univ. of Illinois, 7.DEFS, 8.CSIS, 9.QST, 10.CIES, 11.WPI-AIMR, 12.InaRIS, 13.Dept. Chem., Univ. of Chicago, 14.Dept. Phys., Univ. of Chicago, 15.JST PRESTO)
[18a-W9_324-3]Polarization-dependent optical properties of Ce3+ centers in thin-film MgAl2O4
〇Manato Kawahara1,2, Jieyuan Song3, Tarun Kakinada3, Hiroaki Sukegawa3, Koki Takano1,2, Yoshiki Maeda1,2, Jiefei Zhang4, Jun Ishihara5, Makoto Kohda5,6,7,8, Shunsuke Fukami1,2,7,9,10,11, Joseph Heremans4,12, Giulia Galli4,11,13, David Awschalom4,11,14, Hideo Ohno1,7,9,10, Shun Kanai1,2,6,7,9 (1.LNS,RIEC, 2.Dept. Electron. Eng., Tohoku Univ., 3.NIMS, 4.MSD, Argonne National Lab., 5.Dept. Mater. Sci., Tohoku Univ., 6.DEFS, 7.CSIS, 8.QST, 9.CIES, 10.WPI-AIMR, 11.InaRIS, 12.PME, Univ. of Chicago, 13.Dept. Chem., Univ. of Chicago, 14.Dept. Phys., Univ. of Chicago)
[18a-W9_324-4]Relationship between Electron Irradiation Dose and Magnetic Sensitivity in the Formation of Silicon Vacancies in 4H-SiC
〇(M1)Akinori Nishimoto1,2, Shinichiro Sato2, Koichi Murata3, Masafumi Hanawa3, Seiichi Saiki2, Yuichi Yamazaki2, Hidekazu Tsuchida3, Yasuto Hizikata1, Takeshi Oshima2 (1.Saitama Univ., 2.QST, 3.CRIEPI)
[18a-W9_324-5]Effects of Electron Irradiation Temperature on the Defect Formation in 4H-SiC
〇Noboru Taguchi1,2, Shinichiro Sato2, Koichi Murata3, Shota Yamazaki2, Naotsugu Nagasawa2, Naoto Hagura1 (1.TCU, 2.QST, 3.CRIEPI)
[18a-W9_324-6]Luminescence Properties of Vanadium Centers in 4H-SiC Formed by Ion Implantation
〇Yoshitaro Uchida1,2, Shinichiro Sato2, Tsuchida Hidetsugu1 (1.Kyoto Univ., 2.QST)
[18a-W9_324-7]Expansion of the homogeneous region of single crystal diamond for quantum sensors
〇Hirokazu Tsuji1, Yoshiki Nishibayashi1, Minori teramoto1, Yutaka Kobayashi1 (1.Sumitomo Electric Industries, Ltd.)
[18a-W9_324-8]Simulation schemes and results of defect dynamics in diamond by femtosecond laser
〇Yoshiyuki Miyamoto1, Toshiharu Makino1, Hiromitsu Kato1 (1.AIST)
[18a-W9_324-9]Diamond Quantum Electronics: An Integrated Platform of Boron-Doped Diamond and NV Centers
〇Keigo Arai1 (1.Science Tokyo)
