Presentation Information
[3P87]Non-contact evaluation of interface potential change in (Hf, Zr)O2/Si heterojunctions
*Tiankai Jia1, Dongxun Yang2, Haining Li3, Mohit Mohit4, Manjakavahoaka Razanoelina1, Takeshi Kijima3, Hiroyasu Yamahara3, Munetoshi Seki3, Hitoshi Tabata3, Masayoshi Tonouchi2, Iwao Kawayama1 (1. Graduate School of Energy Science, Kyoto University, 2. Institute of Laser Engineering, Osaka University, 3. Graduate School of Engineering, The University of Tokyo, 4. Department of Physics, Indian Institute of Technology Madras)
This study explores the potential of hafnium zirconium oxide (HfxZr1-xO2, HZO) thin films for enhancing energy-efficient electronic devices, focusing on the HZO/Si interface quality. Terahertz emission spectroscopy (TES) is used to non-destructively assess electric potential changes at this interface. By exciting photocarriers in p-type silicon with a femtosecond laser, the transient current is generated which produces a THz wave. Findings show that THz emission peaks at an Hf content of x = 0.05 and decreases with higher Hf contents, indicating stronger silicon conduction band bending at lower Hf contents due to interface states from vacancies or impurities.