Presentation Information
[3P91]Effects of oxygen flow rate on the physical properties of PCMO thin films
*Koyo Kishida1, Tsuneo Yasue1 (1. Graduate School of Engineering , Osaka Electro-Communication University)
The operating mechanism of ReRAM has not been fully understood yet. In some proposed mechanisms, oxygen vacancy plays an important role to the resistive switching.In this study, we researched how the physical properties of PCMO thin films are affected by the oxygen flow rate during film deposition. PCMO(Pr0.7Ca0.3MnO3) thin films were deposited by RF magnetron sputtering with the oxygen flow rates of 0, 0.8, and 1.6 sccm during deposition. STO(100) and LAO(100) substrates, which introduce the tensile and compressive stress to the PCMO film respectively, were used. The X-ray diffraction peak from PCMO deposited on the LAO(100) substrate appeared at slightly lower angles than that of the substrate peak. This indicates that the PCMO thin film grows epitaxially. Furthermore, with increasing the oxygen flow rate during deposition, the intensity of PCMO(200) peak decreases. The compensation of the oxygen vacancy by adding oxygen during growth rather inhibits the epitaxial growth.