Presentation Information
[3P98]Fabrication and characterization of Hf and HfN Spindt-type emitters formed by triode high-power pulsed magnetron sputtering
*Shun Kondo1, Takeo Nakano1, Md. Suruz Mian1, Masayoshi Nagao2, Hiromasa Murata2 (1. Faculty of Science and Technology, Seikei University, 2. National Institute of Advanced Industrial Science and Technology)
We have been attempting to fabricate a Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPMS), a kind of ionized sputtering technique. The vacuum deposition has been used so far to form an emitter cone in the Spindt-type emitter fabrication. If the sputtering can be substituted, it will be achieved to use compound material suitable for emitter in addition to large area FEAs deposition. In t-HPPMS, the plasma potential can be controlled by applying a positive bias to the cap electrode that is in contact with the plasma. Therefore, the direction of sputtered particles can be aligned with the normal direction of the substrate. In this study, we will report on these results, as we fabricated and compared Hf and HfN emitters and made emission measurements on Hf emitters.