Presentation Information
[5P108]Threshold Voltage Shift by Charge Trap with Atomically Thin Heterostructure WS2/MoS2 -FET
*Hiroki Waizumi1,2, Atsushi Ando3, Tsuyoshi Takaoka4, Toshihiro Shimada1, Nasiruddin Md.2, Tadahiro Komeda4 (1. Hokkaido University, 2. Department of Chemistry, Graduate School of Science, Tohoku University, 3. National Institute of Advanced Industrial Science and Technology (AIST), 4. IMRAM, Tohoku University)