JVSS 2024
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Session Details

Oral/Invited/Keynote SessionISSS-10 : 2. Physics at Surfaces and Interfaces

[4C01-05]Physics at Surfaces and Interfaces 5

Wed. Oct 23, 2024 8:40 AM - 10:20 AM JST
Wed. Oct 23, 2024 11:40 PM - 1:20 AM UTC
C: Conference Room 21(2F)
Chair:Koichiro Yaji(National Institute for Materials Science)
8:40 AM - 9:00 AM JST(11:40 PM - 12:00 AM UTC)

[4C01]Tuning the conductance of mechanoresistive single molecule junctions

Enrique Montes1, Luis A. Cobas2, Darío Otero3, Lucía Palomino-Ruiz3, Shintaro Fujii4, M.Teresa González2, Juan M. Cuerva3, *Hector Vazquez1 (1. Institute of Physics, Czech Academy of Sciences, 2. IMDEA Nanoscience, 3. University of Granada, 4. Tokyo Institute of Technology)
9:00 AM - 9:20 AM JST(12:00 AM - 12:20 AM UTC)

[4C02]Temperature dependence of the orientation of single molecule magnets encapsulated in C80 fullerenes

*Ryunosuke Sagehashi1,2, Wei Chuang Lee2, Fupin Liu3, Alexey A. Popov3, Matthias Muntwiler4, Bernard Delley4, Peter Krueger5, Thomas Greber2 (1. Institute for Molecular Science, 2. Physik-Institut, University of Zürich, 3. Leibniz Institute of Solid State and Materials Research, 4. Paul Scherrer Institute, 5. Graduate School of Engineering, Chiba University)
9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[4C03]Modifying electrical and optical properties of monolayer silicon carbide through molecular doping

*Li-Sheng Lin1, Yu-Cheng Fang2, Jui-Cheng Kao2, Yu-Chieh Lo2, Ya-Ping Chiu1,3, Jyh-Pin Chou1,4 (1. Graduate School of Advanced Technology, National Taiwan University, 2. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 3. Department of Physics, National Taiwan University, 4. Department of Physics, National Changhua University of Education)
9:40 AM - 10:00 AM JST(12:40 AM - 1:00 AM UTC)

[4C04]Hydrogen Depth Distribution and Diffusion in Thin Epitaxial Vanadium Film

*Sudhansu Sekhar Das1, Takahiro Ozawa1, Taizo Kawauchi1, Hiroshi Nakanishi2, Katsuyuki Fukutani1,3 (1. Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan, 2. National Institute of Technology, Akashi College, Nishioka, Uozumi Akashi-shi, Hyogo 674-8501, Japan, 3. Advanced Science Research Center, Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195, Japan)
10:00 AM - 10:20 AM JST(1:00 AM - 1:20 AM UTC)

[4C05]Hydrogen absorption and its effects on the electronic and lattice properties in high-entropy perovskite oxide film

*Takahiro Ozawa1, Kaidong Wang2, Kazunori Nishio2, Ryota Shimizu2,3, Taro Hitosugi2,3, Katsuyuki Fukutani1,4 (1. Institute of Industrial Science, The University of Tokyo, 2. School of Materials and Chemical Technology, Tokyo Institute of Technology, 3. Department of Chemistry, The University of Tokyo, 4. Advanced Science Research Center, Japan Atomic Energy Agency)
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