Session Details

[M-2]Characterization and Device Applications

Mon. Sep 2, 2024 4:15 PM - 5:30 PM JST
Mon. Sep 2, 2024 7:15 AM - 8:30 AM UTC
Room M (Special Conference Room)(4th Floor)
Session Chair: Yoriko Tominaga (Hiroshima Univ.), Shingo Ogawa (Toray Research Center, Inc.)

[M-2-01 (Invited)]Three-Level Charge Pumping Technique for SiC-MOS Interface Characterization

〇Hiroshi Yano1 (1. Univ. of Tsukuba (Japan))

[M-2-02]Time-dependent dielectric breakdown characterization of bulk boron nitride films in sp2-phase prepared by a reactive plasma assisted coating method

〇Yuya Asamoto1, Masao Noma2, Shigehiko Hasegawa3, Michiru Yamashita4, Keiichiro Urabe1, Koji Eriguchi1 (1. Kyoto Univ. (Japan), 2. Shinko Seiki Corp. Ltd. (Japan), 3. Osaka Univ. (Japan), 4. Hyogo Prefectural Inst. Technol. (Japan))

[M-2-03]Nondestructive Evaluation of Thermal-Process-Induced Change of Sn/Cu/Ni Plating Thin Film Stacks Based on EDX Measurement and Bayesian Inference

〇Yutaka Hoshina1 (1. Sumitomo Electric Industries, Ltd. (Japan))

[M-2-04]Rapid Microwave Synthesis of Solution-Processed a-IGZO Thin-Film Transistors for High-Performance pH Sensing

〇Ki-Ju Park1, Won-Ju Cho1 (1. The Univ. of Kwangwoon (Korea))