Session Details
[K-2]Characterization I
Tue. Sep 16, 2025 3:30 PM - 5:00 PM JST
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Room K (413, 4th Floor)
Session Chair: Takuo Sasaki (QST), Shinjiro Hara (NIMS)
[K-2-01 (Invited)]Introduction of the new synchrotron radiation facility NanoTerasu and its applications to nanomaterials
〇Koji Horiba1 (1. QST (Japan))
[K-2-02]Elucidation of Hidden Grain-Boundary Effects in MOCVD MoS2 Films via Single-Grain device and ultra-short channel TLM
〇Keisuke Atsumi1, Shuhong Li1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1. University of Tokyo (Japan), 2. National Institute of Materials Science (Japan))
[K-2-03]Variability-Tolerant Performance Prediction Model for array CNT-FETs: Alignment and Scalability Study
Himanshu Sharma1, Fabian Ducry1, Marina Timmermans1, Luca Mana1, Han Han1, Lijun Liu1, Xiangyu Wu1, Katherine Jinkins2, Michael Arnold2, Jean-François de Marneffe1, Cesar Javier Lockhart de la Rosa1, Gouri Sankar Kar1, 〇Dennis Lin1 (1. imec Leuven (Belgium), 2. Sixline Semiconductor (United States of America))
[K-2-04]Determination of Critical Carrier Density in Re-doped WSe2 Crystal and Their Application to Esaki Diode
〇Toshinari Sugiyama1, Satoshi Morito2, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Kenji Watanabe3, Takashi Taniguchi3, Kosuke Nagashio1 (1. The University of Tokyo (Japan), 2. Saitama University (Japan), 3. National Institute for Materials Science (NIMS) (Japan))
[K-2-05]Probing Interface Trap Density and Mobility Scattering Mechanism in Monolayer MoS2 Using Local-Back-Gate Transistors
〇Yuan-Chun Eric Su1, Yi-Shuan Cheng1, Sheng-Zai Liu1, Jian-Chen Tsai1, Jing-Kai Jiang1, Wen-Hao Chang1,2,3 (1. National Yang Ming Chiao Tung University (Taiwan), 2. Academia Sinica (Taiwan), 3. Center for Emergent Functional Matter Science (Taiwan))