講演情報
[10p-N322-12]High-Resolution Synchrotron X-ray Topography of 4H-SiC Wafers Using a Wide-Field Detector at SPring-8 BL16B2
〇(M1)Yuhui Huang1, Rui Zhou1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1.Waseda Univ., 2.JASRI, 3.RIKEN)
キーワード：
Silicon Carbide (SiC)、Synchrotron X-ray Topography、Crystal Defects
SiC, a promising semiconductor for power devices due to excellent properties, needs cost reduction via larger wafers and higher yield, requiring accurate wafer-level defect evaluation. Traditional XRT with nuclear emulsion plates struggles for wafer-scale measurement, and current X-ray cameras have limited field of view. To address this, an X-ray topography system with wide field of view and high resolution was developed at SPring-8 BL16B2. This presentation reports its application to 4H-SiC wafer evaluation, shows measurement results from the entire wafer and from experiments conducted in transmission geometry as well.