[8p-P10-1~49] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

英語発表

[8p-P10-34] The Enhancements of p-Type Semiconductor trends of Nitrogen-Doping ZnO: Role of Nitrogen and Oxygen Annealing

〇(M2)Abrarul Haque¹, Yumika Yamada¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane University)

キーワード：

Nitrogen doped、p-type ZnO、Annealing

Zinc oxide (ZnO) is a promising wide-bandgap semiconductor for optoelectronic applications, but achieving stable p-type conductivity remains a challenge due to self-compensating native defects. Nitrogen doping is considered one of the most viable solutions, as nitrogen can substitute oxygen and create acceptor states. However, nitrogen incorporation is difficult under standard conditions. Annealing in nitrogen or oxygen atmospheres significantly influences nitrogen activation and lattice stability. This study explores how nitrogen and oxygen annealing affect the c-axis lattice parameter of nitrogen-doped ZnO thin films.