講演情報
[8p-S102-2]GaN-on-diamond HEMTs with suppressed self-heating effects
〇Naoteru Shigekawa1, Jianbo Liang1, Yutaka Ohno2 (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)
キーワード：
surface activated bonding、diamond wafer、GaN HEMT
GaN high electron mobility transistors (HEMTs) have been widely used as high-frequency and high-power electron devices because of the excellent transport properties of electrons and breakdown characteristics of GaN. Notably the performances of GaN HEMTs are likely to be limited by their self-heating effects. The ultimate solution to this issue is assumed to be provided by adopting the GaN-on-diamond configuration, in which the heat generating in the GaN channels should be efficiently dissipated throw the diamond. In this presentation, we discuss the fabrication of GaN/diamond junctions by using the wafer bonding and the characteristics of the prepared on-diamond HEMTs in comparison with those of on-Si and on-SiC HEMTs made of the same heterostructures.