セッション詳細

[8p-S102-1~9]日韓共同応用物理シンポジウム「量子材料・デバイスと先端半導体」

2025年9月8日(月) 13:00 〜 18:00
S102 (共通講義棟南)

[8p-S102-1]Growth of Semiconductor type-II Quantum Nanostructures by Droplet Epitaxy

〇Jong Su Kim1, Jin Dong Song2, Sang Jun Lee3 (1.Yeungnam Univ., 2.KIST, 3.KRISS)

[8p-S102-2]GaN-on-diamond HEMTs with suppressed self-heating effects

〇Naoteru Shigekawa1, Jianbo Liang1, Yutaka Ohno2 (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)

[8p-S102-4]N-polar GaN-Based Heterostructures: Challenges and Opportunities

〇Tetsuya Suemitsu1, Takeshi Kimura1, Takashi Matsuoka1 (1.Tohoku Univ.)

[8p-S102-5]Physical Reservoir Computing Using Artificial Synaptic Devices

〇Hongseok Oh1 (1.Soongsil Univ.)

[8p-S102-6]Water-Induced Instability and Its Enhancement in Field-Effect Transistors Based on 2D Layered Materials

〇Ryo Nouchi1 (1.Osaka Metro. Univ.)

[8p-S102-7]Contact Engineering in Atomically Thin 2D Electronics

〇Sangyeon Pak1 (1.Hongik University)

[8p-S102-8]Fabrication of transfer-free graphene FETs utilizing the catalyst metal agglomeration technique with fine Ni patterns

〇Toshiharu Kubo1, Naoyuki Sasada1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Inst. Tech.)

[8p-S102-9]2D materials beyond the limit of 3D bulk semiconductors

〇Hyesung Park1 (1.Korea Univ.)