講演情報
[8p-S102-3]Site- and Density-controlled Single Photon Emitters with Quantum Dots, Defects, and Nanoparticles Coupled with Photonic Structures
〇Yong-Hoon Cho1 (1.KAIST)
キーワード：
single photon emitters、quantum dots、defects
Site and density control of semiconductor-based quantum emitters are crucial for developing quantum photonic systems. We present the site- and density-controlled quantum emitters using InGaN quantum dots (QDs) embedded in GaN nanowires, GaN defects grown on patterned sapphire substrates, and halide perovskite nanoparticles (NPs) coupled with circular Bragg reflectors. We utilized the nanoscale quenching technique with focused ion beam irradiation in high-density QDs-in-nanowires and high-density NPs, achieving higher purity single-photon generation from a luminescent single QD and NP by suppressing unwanted emissions from surrounding QDs and NPs, respectively. The selective area GaN growth on the patterned sapphire substrate was carried out by using metal-organic chemical vapor deposition, resulting in telecom O-band single quantum emitters operating at room temperature.