講演情報
[8p-S102-6]Water-Induced Instability and Its Enhancement in Field-Effect Transistors Based on 2D Layered Materials
〇Ryo Nouchi1 (1.Osaka Metro. Univ.)
キーワード：
two-dimensional material、operational instability、humidity effect
The instability in the operation of electronic devices is a central issue in the development of feasible applications. Low-dimensional nanomaterials possessing one-dimensional (1D) and two-dimensional (2D) bodies are prone to environmental conditions owing to their high surface-to-volume ratios. Field-effect transistors (FETs) based on 1D materials such as carbon nanotubes and 2D materials such as graphene are known to be significantly affected by the presence of water from ambient air. Water-induced instabilities have been understood by charge-carrier trapping within the channel and the ferroelectric alignment of water dipoles, both of which are ascribed to the effects induced by the application of gate voltage (VG). In this talk, I will discuss the effects induced by the largely unexplored counterpart, the drain voltage (VD), by considering FETs with a channel layer of a representative 2D semiconductor, MoS2, as an example.