講演情報
[9a-N206-7]Broadband and Highly Responsive n-Ge Schottky Photodetectors with Short-Wave Infrared Transparent Conductive Oxide Electrodes
〇Rahmat Hadi Saputro1, Tomo Tanaka2, Hiroyuki Ishii1, Tatsuro Maeda1 (1.AIST, 2.NEC Corp.)
キーワード：
Ge Schottky、TCO、Photodetectors
Front-side illuminated Schottky photodetectors (SPDs) with metal electrodes have limited photosensitivity. To enhance carrier extraction while maintaining light penetration, we introduced a transparent conductive oxide (TCO) film (e.g., Ce, H-doped In2O3) between the metal electrode and the absorbing layer, potentially enabling high-speed and broadband photosensitivity in the short-wave infrared (SWIR) region. In this study, we have demonstrated broadband and highly responsive n-Ge SPDs with that utilize SWIR-TCO electrode.