[9p-N202-1~17] 3.13 シリコンフォトニクス・光電融合集積・光制御

14:15 〜 14:30奨励賞エントリー英語発表

[9p-N202-4] High saturation current and high speed Ge-on-Si photodetector with 4-port evanescently coupled waveguides

〇(D)CHAO ZHANG¹, Rui Tang¹, Makoto Okano², Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo, 2.National Inst. of Advanced Indus. Sci. and Tech)

キーワード：

Photodetector、Ge-on-Si、Evanescently coupled

We demonstrate a four-port evanescently coupled Ge-on-Si PIN photodetector with 1.08 A/W responsivity, 54 mA saturation current, and 25 GHz bandwidth, offering a promising solution for high-speed optical communication and RF photonic applications.