講演情報
[9p-N303-10]Investigation of photocurrent excitation wavelength dependence of a single V2 center in 4H-SiC
〇(DC)Kazuki Okajima1, Naoya Morioka1,2, Tetsuri Nishikawa1, Hiroshi Abe3, Koichi Murata4, Takeshi Ohshima3,5, Hidekazu Tsuchida4, Norikazu Mizuochi1,2,6 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.CRIEPI, 5.Tohoku Univ., 6.QUP KEK)
キーワード：
silicon carbide、silicon vacancy、PDMR
Electrical detection of color center's spins in semiconductors using photocurrent detected magnetic resonance(PDMR) is expected to contribute to realizing integrated quantum devices.However, evaluation of excitation wavelength has not been conducted for PDMR of a single Si vacancy in 4H-SiC, leaving room for improvement in PDMR detection efficiency. In this study, we investigated the dependence of photoionization rates and photocurrent-to-background current ratios on excitation wavelength. In this presentation, we will discuss the details of the results and the principle behind the generation of background photocurrent.