講演情報
[14a-K303-7]Observation of the orbital Hall effect in Si using spin-torque ferromagnetic resonance (II)
〇Ryoga Matsumoto1, Ryo Ohshima1,2, Yuichiro Ando3, Masashi Shiraishi1,2 (1.Kyoto Univ., 2.Kyoto Univ. CSRN, 3.Osaka Metro. Univ.)
キーワード：
orbital Hall effect、silicon、spin-torque ferromagnetic resonance
The orbital Hall effect (OHE), where an application of an electric field gives rise to the transverse flow of orbital angular momentum, has been attracting tremendous attention. Whereas the spin-orbit torque (SOT) driven by the spin Hall effect requires, in principle, heavy materials with a large spin-orbit coupling (SOC), the OHE takes place even in light elements, which can circumvent the limitation of the material choice for SOT devices. Although the OHE has been mainly studied in light transition metals with the s-d orbital hybridization such as Ti, the OHE is observable in a wide variety of materials with orbital hybridization, given that the hybridization is the key for orbital current generation. In this study, the OHE in Si, which is semiconductor and has the s-p orbital hybridization, is investigated by using spin-torque ferromagnetic resonance (ST-FMR).