[14p-K303-1~13] 10.2 スピン基盤技術・萌芽的デバイス技術

14:00 〜 14:15奨励賞エントリー英語発表

[14p-K303-3] Investigation of tunable Co/Pt spintronics THz emitter by ionic gating

〇Yuu Maruyama¹, Weipeng Wu², Ryo Ohshima^1,3, Yuichiro Ando^1,3, Benjamin Jungfleisch², Masashi Shiraishi^1,3 (1.Kyoto Univ., 2.Delaware Univ., 3.CSRN Kyoto Univ.)

キーワード：

spintronics THz emitter、spin orbit interaction、ionic gating

Spintronics THz emitter (STE) is gathering a lot of attention as a broad band THz source made of ferromagnet metal (FM) / heavy metal (HM) bilayer structure. In the THz emission process, a spin current is injected from the FM layer to the HM layer and is converted to a charge current, where the spin-orbit interaction (SOI) plays a critical role in determining the intensity of the THz signal. It has been believed that the SOI is material specific and is not easy to control externally. However, by applying an ionic gating technique, the inverse spin Hall effect and the Hanle magnetoresistance in nanometer-thick Pt single layer were modulated due to the modulation of the SOI. These results suggest realization of the tunable STE, which facilitates future applications of STE and the other spintronic devices. To explore the possibility, we investigated tunability of STE by applying an ionic gating technique.