講演情報
[16p-K305-10]Silicon Ion Implantation Enables Mode Conversion Control in Silicon Nitride Asymmetric Directional Couplers
〇Rongyang Xu1, Shabnam Taheriniya1, Akhil Varri2, Wolfram Pernice1,2 (1.Heidelberg Univ., 2.Muenster Univ.)
キーワード：
Silicon ion implantation、Asymmetric directional coupler、Mode conversion
The rapid development of artificial intelligence has brought great convenience to people's lives. However, it has also created an unprecedented demand for computing power. Because light has high propagation speed and inherent parallelism, researchers have begun to explore photonic accelerators based on photonic integrated circuits (PICs). Photonic crossbar arrays based on wavelength division multiplexing can achieve multiply-accumulate operations of up to 1012 per second. Mode division multiplexing (MDM) can be used to further improve the parallelism of photonic accelerators. Asymmetric directional couplers (DCs) are one of the key devices for implementing MDM in PICs. However, fabrication errors can have a significant impact on the mode conversion of asymmetric DCs. We proposed that silicon ion implantation, a low-loss trimming method, can effectively control mode conversion in asymmetric DCs, ultimately helping to improve the performance of photonic accelerators based on MDM technology.