講演情報
[16p-K305-15]Increasing Photoluminescence of MBE-grown GeSn Alloys Using Thermal Annealing
Ruei-Jhang Wang1, Yue-Tong Jheng1, 〇Guo-En Chang1 (1.National Chung Cheng Univ.)
キーワード：
GeSn alloys、Photoluminescence、Annealing
Group-IV GeSn alloys has been considered as a new light emitting material for silicon photonics. By adding Sn to Ge, the energy band structure can be effectively modified into direct bandgap. GeSn alloys are usually grown at low temperature to suppress Sn segregation, but with a price of degraded material quality. Here, we present a study of using thermal annealing to enhance photoluminescence (PL) from GeSn thin films grown on Si substrate using low-temperature molecular beam epitaxy.