講演情報
[16p-K305-16]Structural Evolution of GeSn Thin-Film on Silicon Under Microwave Annealing
Yue-Tong Jheng1, 〇Guo-En Chang1 (1.National Chung Cheng Univ.)
キーワード：
GeSn alloys、microwave annealing、strain
Recently, Group-IV GeSn alloys have been regarded as a promising candidate for efficient light emitters on silicon for silicon photonics, due to their ability to transition to a direct bandgap with the introduction of a sufficient amount of tin (Sn) content into germanium (Ge). However, the lattice mismatch and the strain relaxation in the GeSn layers are significantly affect the material quality. Thermal annealing has been reported to improve the material quality. Here, we present results on the effects of low thermal budget microwave annealing (MWA) at different powers on the structural and optical properties of GeSn alloys.