講演情報
[16p-P08-4]Characterization of Ferroelectricity in M-polar ScAlN and N-polar ScGeAlN Thin Films
〇Sri Ayu Anggraini1, M. Uehara1, K. Okamoto2, Y. Nakamura2, K. Hirata1, H. Yamada1, M. Akiyama1, H. Funakubo2 (1.AIST, 2.Science Tokyo)
キーワード：
ScAlN、Ferroelectric、Thin films
The discovery of ferroelectric behavior in wurtzite-structured scandium aluminum nitride (ScAlN) thin films has renewed interest in nitride-based ferroelectric [1]. Since the remnant polarization (Pr) of ScAlN is greater than hafnia (HfO2)-based ferroelectric thin films, ScAlN is then touted as an advantageous alternative to hafnia-based ferroelectric material [2]. Furthermore, there has been growing interest in nitrogen (N)-polar ScAlN since the use of N-polar ScAlN is expected to bring more benefits for several electronic devices such as HEMT, compared with that using of metal (M)-polar thin film one [3]. Recently, our group has reported that addition of germanium (Ge) into ScAlN resulted in polarity inversion from M-polar to N-polar (Fig. 1(a)) [4]. While polarity inversion is evident, the ferroelectric behavior of N-polar ScGeAlN is unknown and how it differs from the ferroelectricity of M-polar ScAlN has never been studied before. Therefore, we investigated the ferroelectricity of N-polar ScGeAlN in comparison with M-polar ScAlN in this study.
References:
[1] S. Fichtner et al, J. Appl. Phys. 125 (2019) 114103
[2] N. Sun et al, Appl. Phys. Letter 125 (2024) 032904
[3] P. Wang et al, Appl. Phys. Letter 121 (2022) 023501
[4] S. A. Anggraini et al, JSAP 2021, 22a-P01-4.
References:
[1] S. Fichtner et al, J. Appl. Phys. 125 (2019) 114103
[2] N. Sun et al, Appl. Phys. Letter 125 (2024) 032904
[3] P. Wang et al, Appl. Phys. Letter 121 (2022) 023501
[4] S. A. Anggraini et al, JSAP 2021, 22a-P01-4.