講演情報
[17p-K102-7]Low current operation of silicon spin devices
〇Yasuyuki Koshino1, Minori Goto2, Ryo Ohshima3, Masashi Shiraishi3, Yuichiro Ando1,4 (1.Osaka Metropolitan Univ., 2.Univ, of Fukui, 3.Kyoto Univ., 4.JST PRESTO)
キーワード：
Si spintronics
Steady progress has been made in silicon(Si)-based spintronics, including the room temperature demonstration of spin FET and spin XOR logic devices, and spin transport in the inversion layer.Since these devices are expected to operate at room temperature, the creation of spin functions at room temperature is a key. Another promising device using spins in Si is quantum computation technology based on Si quantum dots. Recently, a considerably high fidelity has been reported, accelerating research and development of Si-based quantum computing. The bottleneck is the detection of the spin state. Currently, Zeeman energy from an external magnetic field is used, but the energy difference that can be formed is small (several tens of μeV) and thus, vulnerable to thermal disturbances. If the ferromagnetic tunnel contacts, established in spin FET, can be used, it will be possible to achieve a high tolerance to thermal disturbances. The differences in the spin detection technologies between spin FET and quantum dot are the operation temperature, number of spins, and the amount of injection/detection current. Therefore, in this study, we investigated the applicability of the ferromagnetic tunnel contacts to the quantum technology.