講演情報
[17p-K302-4]Electron temperatures in double well quantum cascade cooling structures (Ⅳ)
〇(P)Xiangyu Zhu1, Gueric Etesse2, Marc Bescond1,2, Gerald Bastard3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure)
キーワード：
semiconductor、quantum well、thermionic cooling
Managing rapid increase in thermal power densities associated with device miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high efficiency and compatibility for integration. To achieve efficient cooling, we have been working on semiconductor double barrier heterostructures to utilize sequential thermionic cooling effect [1,2].
In this work, we have studied a double quantum well (QW) structure as a model system for the quantum cascade cooling (QCC) structure. The structure consists of two 5 nm-thick AlxGa1-xAs QWs with different Al compositions (x = 0.1 for QW1 and x = 0.2 for QW2) sandwiched by Al0.35Ga0.65As or Al0.7Ga0.3As barriers (see Fig. 1(a)). As an electron cascades through the double QW structure, it can absorb multiple phonons, which can improve the cooling efficiency, when compared with a single QW structure. The tall Al0.7Ga0.3As barriers are designed to block above-barrier thermal current from QW1 and the emitter, making the sequential cascading transport dominant.
More details will be discussed in the presentation.
In this work, we have studied a double quantum well (QW) structure as a model system for the quantum cascade cooling (QCC) structure. The structure consists of two 5 nm-thick AlxGa1-xAs QWs with different Al compositions (x = 0.1 for QW1 and x = 0.2 for QW2) sandwiched by Al0.35Ga0.65As or Al0.7Ga0.3As barriers (see Fig. 1(a)). As an electron cascades through the double QW structure, it can absorb multiple phonons, which can improve the cooling efficiency, when compared with a single QW structure. The tall Al0.7Ga0.3As barriers are designed to block above-barrier thermal current from QW1 and the emitter, making the sequential cascading transport dominant.
More details will be discussed in the presentation.