Session Details
[We-P]Extended Defects
Wed. Sep 30, 2026 4:00 PM - 6:00 PM JST
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Poster-C(4th Floor, G403+G404)
[We-P-69]Unveiling a New Class of Triangular Defects in 4H-SiC Through Multi Scale Analysis
*Cristiano Calabretta1, Beatrice Carbone1, Corrado Bongiorno2, Nicolò Piluso1, Cettina Bottari1, Fabiana Vento1, Giuseppe Arena1, Mario Santi Alessandrino1, Andrea Severino1 (1. Indus. STMICROELECTRONICS (Italy), 2. Inst. CNR-IMM (Italy))
[We-P-70]Toward Multiscale Evaluation of 4H-SiC Wafer Quality by Integrating Wafer-Scale Signatures and Microscopic Defect Inspection
*Koji Ashida1, Daichi Dojima1, Mariko Takahara1, Shota Fujiki3, Kohei Toda1, Hiroshi Mihara1, Mari Yamamoto3, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin University (Japan), 3. Lasertec Corporation (Japan))
[We-P-71]Reducing Annotation Cost in Semiconductor Wafer Defect Classification through Self-Supervised Domain Pre-Training
*Alvin Kiptoo Chirchir1, Matt Roach1, Owen Guy1, Mike Jennings1, Jacob Mitchell2, Justin Lach2 (1. Swansea University (UK), 2. KLA Corp. (USA))
[We-P-72]Rapid Evaluation of Threading Dislocations during Initial-Stage PVT Growth of 4H-SiC Crystals
Govindhan Dhanaraj1, *Xueping Xu1, Rajan Rengarajan1 (1. Coherent Corporation (USA))
[We-P-73]Multi-channel defect inspection of 4H-SiC epitaxial wafers by using a single convolutional neural network trained on composite images from different inspection techniques
*Masaki Hasegawa1, Koichi Endo1, Junji Senzaki1 (1. Nat. Inst. of Adv. Indus. Sci. and Tech. (Japan))
[We-P-74]Scan-Based UV Wafer Screening of Bipolar-Degradation Susceptibility in 4H-SiC via Practical Irradiance-Threshold Mapping
*Takuya Morita1, Kaoru Sugihara1 (1. ITES CO., LTD. (Japan))
[We-P-75]Demonstration of Synchrotron X-ray Topography over an Entire 200-mm 4H-SiC Wafer
*Shunta Harada1, Juheyong Sun1, Kota Tsujimori1, Kentaro Kajiwara2, Takayoshi Shimura3 (1. Nagoya Univ. (Japan), 2. JASRI (Japan), 3. Waseda Univ. (Japan))
[We-P-76]Whole-Wafer Imaging of 6-inch 4H-SiC Wafers using Synchrotron X-ray Topography and Automated Defect Classification
*Yuhui Huang1, Rui Zhou1, Weiyuan Xia1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1. Waseda Univ. (Japan), 2. Japan Synchrotron Radiation Research Inst. (Japan), 3. RIKEN SPring-8 Center (Japan))
[We-P-77]Investigation of the Formation and Propagation of Polytype Inclusions in PVT-Grown 4H-SiC Crystals by Synchrotron X-ray Topography
*Jianpei Zhang1, Zeyu Chen1, Haochi Wang1, Kaixuan Zhang1, Jaehyun Suh1, Balaji Raghothamachar1, Evan Moe2, Yafei Liu2, Michael Dudley1 (1. Stony Brook University (USA), 2. Onsemi (USA))
[We-P-78]Algorithm for automated multimodal characterization of dislocations in 4H-SiC wafers using X-ray topography and polarized light microscopy
*Kosei Takahashi1, Kota Tsujimori2, Michio Kawase1, Keisuke Seo1, Seiya Mizutani3, Yuya Mizutani3, Seiji Mizutani3, Kenta Shimamoto4, Kenta Murayama3, Shunta Harada1,2 (1. Nagoya Univ. (Japan), 2. SSR Corp. (Japan), 3. Mipox Corp. (Japan), 4. Rigaku Corp. (Japan))
[We-P-93LN]Basal Plane Dislocation Mapping and Conversion on 200mm Silicon Carbide Epitaxial Wafers
*Thomas A. Kuhr1, Scott A. Ustin1, Howard Sin2, YuChang Wang2, Leo Jin2 (1. Wolfspeed (USA), 2. Visiontec (Singapore))
[We-P-94LN]Correlation Photoluminescence and 3D Raman Imaging Analysis of Threading Dislocations in Free-standing HVPE GaN Substrate
*Olga Milikofu1, Toshihiro Asada1 (1. NISSAN ARC LTD. (Japan))
[We-P-98LN]Ion-Species Effects on Implantation-Induced Lattice Damage for Bipolar Degradation Suppression in 4H-SiC PiN Diodes
Atsushi Shimbori1, *Ryota Wada2, Nobuhiro Tokoro2, Takashi Kuroi2, Chiho Sung3, Hiu Yung Wong4, Alex Q. Huang1 (1. Univ. of Texas at Austin (USA), 2. Nissin Ion Equipment Co., Ltd. (Japan), 3. Unv. of Michigan (USA), 4. San Jose State Univ. (USA))