The 73rd JSAP Spring Meeting 2026
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Session Details

Symposium (Oral)Symposium : Next-generation electron sources and new developments in electron beam technology

[17p-S2_203-1~11]Next-generation electron sources and new developments in electron beam technology

Tue. Mar 17, 2026 1:30 PM - 5:55 PM JST
Tue. Mar 17, 2026 4:30 AM - 8:55 AM UTC
S2_203 (South Bldg. 2)
1:30 PM - 1:35 PM JST(4:30 AM - 4:35 AM UTC)

[17p-S2_203-1]Opening remarks and explanation of the purpose of the symposium

〇Katsuhisa Murakami1 (1.AIST)
1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[17p-S2_203-2]Latest Trends in Next-Generation Electron Sources for Electron Microscopy

〇Toshiaki Kusunoki1, Noriaki Arai2 (1.Hitachi Ltd., 2.Hitachi High-Tech)
2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[17p-S2_203-3]Proposal of a Thermionic and Electrostatic Emission Cathode Driven Under Space Charge Limiting by Overcoming Joule Heating

Hiroki Sato2, Jonghyun Moon1,2, 〇Yoichiro Neo1,2 (1.RIE Shizuoka Univ., 2.Shizuoka Univ.)
2:35 PM - 3:05 PM JST(5:35 AM - 6:05 AM UTC)

[17p-S2_203-4]Recent Developments in Spin-Polarized Field Emission Type Electron Sources

〇Shigekazu Nagai1 (1.Mie Univ.)
3:05 PM - 3:35 PM JST(6:05 AM - 6:35 AM UTC)

[17p-S2_203-5]Research on Organic Electronic Materials Using Field Emission Angular Distribution

〇Yoichi Yamada1 (1.Tsukuba Univ.)
3:50 PM - 4:20 PM JST(6:50 AM - 7:20 AM UTC)

[17p-S2_203-6]Development of Semiconductor Photocathodes and New Horizons in Electron Beam Technology: "How about a pulsed electron source?"

〇Atsushi Koizumi1 (1.Photo electron Soul)
4:20 PM - 4:50 PM JST(7:20 AM - 7:50 AM UTC)

[17p-S2_203-7]Development of High-Efficiency Photocathodes Utilizing Surface Electric Field

〇Keiki Fukumoto1, Atsushi Kubo2 (1.KEK, 2.Univ. of Tsukuba)
4:50 PM - 5:20 PM JST(7:50 AM - 8:20 AM UTC)

[17p-S2_203-8]Volcano-structured double gate field emitter

〇Masayoshi Nagao1, Katsuhisa Murakami1, Hiromasa Murata1 (1.AIST)
5:20 PM - 5:35 PM JST(8:20 AM - 8:35 AM UTC)

[17p-S2_203-9]Energy Distribution of Electrons Emitted from Graphene-Insulator-Semiconductor-Structured Planar Electron Source

〇Fujio Wakaya1, Takao Koichi1, Shiyuu Tanabe1, Satoshi Abo1, Masayoshi Nagao2, Katsuhisa Murakami2 (1.UOsaka, 2.AIST)
5:35 PM - 5:50 PM JST(8:35 AM - 8:50 AM UTC)

[17p-S2_203-10]Monochromatic electron emission from planar type electron emission device using graphene/BN/metal structure

〇Katsuhisa Murakami1, Kosuke Matsuzaki1, Hiroshi Takashima1, Hiromasa Murata1, Masayoshi Nagao1 (1.AIST)
5:50 PM - 5:55 PM JST(8:50 AM - 8:55 AM UTC)

[17p-S2_203-11]Closing

〇Katsuhisa Murakami1 (1.AIST)
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