Presentation Information
[3F06]Observation of Chemisorbed O2 Molecule at SiO2/Si(001) Interface During Si Dry Oxidation
*Yasutaka Tsuda1, Akitaka Yoshigoe1, Shuichi Ogawa2, Tetsuya Sakamoto3, Yuji Takakuwa1,4 (1. Japan Atomic Energy Agency, 2. Nihon University, 3. TOYAMA, 4. Tohoku University)
Realtime X-ray photoemission spectroscopy was used to characterize the SiO2 surface and SiO2/Si interface during irradiating n-Si(001) with a 0.06-eV supersonic O2 molecular beam. Chemisorbed O2 was observed not only during the Si surface oxidation process but also during the SiO2/Si interface oxidation process, suggesting that trapping-mediated process occurs both at the SiO2/Si interface and on the Si surface. We found an excellent linear correlation between the interface oxidation rate and the amount of chemisorbed O2, indicating that at room temperature, the double-step oxidation loop exclusively proceeds through Pb1-paul formation and minority carrier trapping. The offset of the linear correlation indicates the presence of ins-paul on the SiO2 surface, which has nothing to do with the double-step oxidation loop because the flexible SiO2 network relaxes a strain caused by the ins-paul dissociation.