Session Details
[3F01-07]JVSS 1
Tue. Oct 22, 2024 10:00 AM - 12:00 PM JST
Tue. Oct 22, 2024 1:00 AM - 3:00 AM UTC
Tue. Oct 22, 2024 1:00 AM - 3:00 AM UTC
F: Conference Room 32(3F)
Chair:Fumihiko Maeda(Fukuoka Institute of Technology)
Surface analysis, applied surface science and evaluation technology, thin films, semiconductors, magnetic, electronic and optical device materials, electronic material processes
[3F01]Evaluation method of surface roughness using SEM
*Kei Nagatomo1, Takeshi Otsuka1, Yuhei Nakajima1, Masahide Shima1, Katsuhiko Tashiro2 (1. JEOL Ltd., 2. Department of Science and Technology, Kanto Gakuin University)
[3F02]Efficient Photocatalytic H2O2 Production Using Metal-Organic Frameworks and Two-Phase Reaction System
*HIROMI YAMASHITA1, Yifan Zhao1, Yoshifumi Kondo1, Yasutaka Kuwahara1, Kohsuke Mori1 (1. Osaka University)
[3F03]Texture evolution of high carrier mobility In2O3 transparent conductive films.
*Kanto Fukugawa1,2, Kaoru Igarashi2, Junichi Nomoto1 (1. Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2. Graduate School of Engineering, Chiba Institute of Technology)
[3F04]Real-time resistance measurements in multilayer oxide thin films and characterization of thin-film transistors using Al2O3/ZnO multilayers for flexible device applications
*Kensuke Nakata1, Kaiko Yuge1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1. Nanomaterials Microdevices Research Center, Osaka Institute of Technology)
[3F05]Fabrication of oxide semiconductor thin films using aqueous precursor solutions with an excimer light and characterization of thin-film transistors
*Hideya Ochiai1, Ryosuke Kasahara1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Noritaka Takezoe2, Shion Yamaguchi2, Hiroyasu Ito2, Toshihiko Maemoto1 (1. Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 2. Optical Process GBU, Industrial Process Division, Ushio Incorporated)
[3F06]Observation of Chemisorbed O2 Molecule at SiO2/Si(001) Interface During Si Dry Oxidation
*Yasutaka Tsuda1, Akitaka Yoshigoe1, Shuichi Ogawa2, Tetsuya Sakamoto3, Yuji Takakuwa1,4 (1. Japan Atomic Energy Agency, 2. Nihon University, 3. TOYAMA, 4. Tohoku University)
[3F07]International standardization of methods for measuring cryopump performance
*Takahiro Yatsu1, Yoshinobu Murayama2, Atsuhiro Kuwajima3, Masafumi Kishi3 (1. Sumitomo Heavy Industries,Ltd., 2. ULVAC CRYOGENICS INCORPORATED, 3. CANON ANELVA CORPORATION)