Presentation Information
[3F10]Nonlinear electric field enhancement in the THz range through self-organized metallic gap structures induced by VO2 phase transition
*Ai I. Osaka1,2, Masaya Nagai3, Shingo Genchi2, Boyuan Yu2, Hidekazu Tanaka2, Azusa N. Hattori2 (1. Graduated School of Engineering, University of Hyogo, 2. SANKEN, Osaka University, 3. Graduate School of Engineering Science, Osaka University)
VO2, a strongly correlated electron material, undergoes a metal-insulator transition (MIT) near room temperature under slight external stimuli. The minimum units of MIT are electronic domains approximately sub-micrometers in size, where the coexistence of insulator and metal phases near the MIT temperature leads to the formation of self-organized metal networks. Here, we propose using this self-organized metallic gap structure in VO2 as a nano antenna, where the size and composition of the metallic network can be controlled externally. In our demonstration, we irradiated a VO2 film on a silicon substrate with THz light and observed a nonlinear electric field enhancement due to the metallic network.