2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-1]Ferroelectric Memory Materials

Mon. Sep 2, 2024 2:30 PM - 3:45 PM JST
Mon. Sep 2, 2024 5:30 AM - 6:45 AM UTC
Room B (408)(4th Floor)
Session Chair: Halid Mulaosmanovic (GlobalFoundries), Atsushi Himeno (Panasonic Holdings Corp.)
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)Invited

[B-1-01 (Invited)]Materials Development and Interfacial Engineering for Emerging Ferroelectric Memories

Geun Hyeong Park1, Se Hyun Kim1, 〇Min Hyuk Park1 (1. Seoul National Univ. (Korea))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[B-1-02]Understanding of Imprint Behavior of Ferroelectric Hf0.5Zr0.5O2 thin Film: Role of Charge Injection and Field Cycling

〇Zhenhong Liu1, Zuochen Cai1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1. The University of Tokyo (Japan))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[B-1-03]New insight of ferroelectric Hf0.5Zr0.5O2 properties under cryogenic
temperatures in integrated ferroelectric capacitors

〇Flavien Berthaud1, Liam Hosier1, Niccolo Castellani1, Jean Rottner1, Valentina Méli1, Laurent Grenouillet1, Julie Laguerre1, Catherine Carabasse1, Jean Coignus1, Mikaël Cassé1, Simon Martin1 (1. Univ. Grenoble Alpes, CEA, Leti F-38000 Grenoble (France))
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[B-1-04]Universal Temperature-Strain Phase Diagram of HfxZr1-xO2 Films
Towards to Ferroelectric Phase Engineering

Tianning Cui1, Zhipeng Xue1, Danyang Chen1, Yuyan Chen1, Jingquan Liu1, Mengwei Si1, 〇Xiuyan Li1 (1. Shanghai Jiao Tong University (China))
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