Session Details
[M-1]Oxide Materials
Mon. Sep 2, 2024 2:30 PM - 4:00 PM JST
Mon. Sep 2, 2024 5:30 AM - 7:00 AM UTC
Mon. Sep 2, 2024 5:30 AM - 7:00 AM UTC
Room M (Special Conference Room)(4th Floor)
Session Chair: Takuya Hoshi (NTT Device Technology Lab.), Wen-Wei Wu (NYCU)
[M-1-01 (Invited)]Laser-Based Photoemission Electron Microscopy as a Nondestructive Imaging Tool for Ferroelectric Devices
〇Hirokazu Fujiwara1 (1. The Univ. of Tokyo (Japan))
[M-1-02]Effects of Millisecond Flash Lamp Annealing on the Polarization and Crystallization in Thin Al:HfO2 Films
〇Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Shinichi Kato2, Takumi Mikawa2, Hironori Fujisawa1, Seiji Nakashima1 (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan))
[M-1-03]Low-temperature Selective Growth of Dense and Oriented Heteroepitaxial ZnO Nanowires on Au / Si Substrate with Wafer-Scale Periodic Growth Window Arrays
〇Takumi Noro1, Kentaro Watanabe1,2 (1. Shinshu Univ. (Japan), 2. IFES, Shinshu Univ. (Japan))
[M-1-04]Layer-by-layer Synthesis of Functional Oxides by Digitally Processed DC Sputtering with Alternating Surface Oxidation
〇Hideo Isshiki1, Daiki Yamashita1, Mehdi Ali1, Masaya Takeuchi1, Taiga Hokkezu1, Yuki Takamatsu1, Shoji Kiyota1, Satoshi Fujiya1, Yasuhito Tanaka1,2, Shinichiro saisho1,2 (1. The University of Electro-Communications (Japan), 2. Shincron Co.Ltd. (Japan))
[M-1-05 (Late News)]Study of the Dependence of Effective Barrier Height on Thickness of HfO2, SiO2, Y2O3, and Al2O3 Films in Metal-Ultra-Thin-Insulator-Germanium Structures
〇Yajun FENG1, Noboru Shimizu1, Keisuke Yamamoto1, Dong Wang1 (1. IGSES,Kyushu University (Japan))