2024 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10]10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Tue. Sep 3, 2024 1:30 PM - 2:00 PM JST
Tue. Sep 3, 2024 4:30 AM - 5:00 AM UTC
Room K (404)(4th Floor)
Session Chair: Kaoru Toko (Univ. of Tsukuba), Ryo Matsumura (NIMS)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-10-01]Utilizing Ultrasonic Spray Pyrolysis Deposition and Various Precursor Combinations to Fabricate High-Performance Zinc-Tin Oxide Thin-Film Transistors

〇HAO-CHUN HUNG1, HUNG-CHI CHANG1, YU-YUE LIN1, HAN-YIN LIU2, WEI-CHOU HSU1 (1. National Cheng Kung University, NCKU (Taiwan), 2. National Sun Yat-Sen University, NSYSU (Taiwan))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-10-02]Fluorination Mechanism and Physical Properties of In2O3:F Thin-film Transistors

〇Jiayi Wang1,2, Kuo Zhang1,2,3, Ziheng Bai2, Nannan You1,2, Yang Xu1,2, Ling Li2,3, Di Geng2,3, Shengkai Wang2,3 (1. High-Frequency High-Voltage Device and Integrated Circuits Research & Development Center, Institute of Microelectronics, Chinese Academy of Sciences (China), 2. Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences (China), 3. University of Chinese Academy of Sciences (China))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-10-03]A Novel Poly-Si/IGZO Thin-Film Transistor CMOS Inverter

〇PingChe Liu1, Chien-Wei Chen2, Chi-Chung Kei2, Pei-Wen Li1, Horng-Chih Lin1 (1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Applied Res. Labs., Taiwan Instrument Research Inst. (Taiwan))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-10-04]Effects of Plasma Hydrogenation on the Performance of T-shaped Gate Poly-Si Thin-Film Transistors

〇Geng-Yuan Xie1, Cheng-Kuei Lee1, Pei-Wen Li1, Ke-Yin Jhou2, Kun-Ming Chen2, Guo-Wei Huang2, Horng-Chih Lin1 (1. National Yang Ming Chiao Tung University (Taiwan), 2. Taiwon Semiconductor Research Institute (Taiwan))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-10-05]Crystal Structure Changes and Their Impact on Electrical Properties through ALD Sub-Cycle Control in the IGO System

〇Gwang Bok Kim1, Jae Kyeong Jeong1 (1. Hanyang Univ. (Korea))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-10-06]Stabilization of P-type Semiconducting TeO2 Based on Surface Energy Effects

〇Rui-Yi Chen1, Shao-Chen Lee1, Ying-Tsan Tang1 (1. National Central University (Taiwan))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-10-07]Nonlinear Electric Field Enhancement in the THz Range by Self-organized Metal Networks through Phase Transition of the VO2

〇Ai Isohashi Osaka1,2, Masaya Nagai3, Hui Ren2, Shingo Genchi2, Boyuan Yu2, Hidekazu Tanaka2, Azusa N. Hattori2 (1. University of Hyogo (Japan), 2. SANKEN, Osaka Univ. (Japan), 3. Osaka Univ. (Japan))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-10-08]Hot-Wire-Type Micromachined Chemiresistive Gas Sensors for Battery-Powered City Gas Alarms

〇Shoichiro Nakao1, Takafumi Taniguchi1, Taishi Orita1, Rui Kakunaka1, Hirokazu Mitsuhashi1 (1. New Cosmos Electric Co., Ltd. (Japan))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-10-09]Complementary Poly-Si Thin-Film Transistors Fabricated Using
Ni-Induced Crystallization Technology Through an Ultra-Thin Oxide Layer

〇Po-Yi Kuo1, Hao-Yu Wang2 (1. National Chin Yi University of Technology (Taiwan), 2. Feng Chia University (Taiwan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-10-10]Investigation of Indium-optimized IGZO TFT via Plasma Enhanced Atomic Layer Deposition Suitable for CMOS Backend of Line Integration

Meishan Zhang1, 〇Wenhui Wang1, Jiqing Lu1, Jun Lan1, Haoran Peng1, Jiamin Li1, Feichi Zhou1, Longyang Lin1, Mei Shen1, Yida Li1 (1. Southern University of Science and Technology (China))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-10-11]Withdrawn

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-10-12]Investigation of HfO2/ZrO2 Superlattice Gate Stack for Scaling

〇TZU-I KAO1, Kai-Wei Huang1, Yi-Wen Lin1, Jun-Wei Wu2, Yung-Chun Wu1,2, Fu Ju Hou3 (1. Dept. of Engineering and System Science, National Tsing Hua Univ (Taiwan), 2. College of Semiconductor Research, National Tsing Hua Univ., (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-10-13]Extremely Downscaling Ultra-thin ALD-ZnO Transistors to Sub-20nm

〇Minghe Zhang1, Tingzhen Yi1, Dengqin Xu1, Ruibin Duan1, Junchen Dong2, Yi Wang1, Dedong Han1,3,4, Xing Zhang1,5 (1. Peking Univ. (China), 2. Beijing Info. Sci. and Tech. Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China), 4. Beijing Superstring Academy of Memory Tech. (China), 5. Peking Univ. Shenzhen Graduate School (China))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-10-14]Investigation of W/L Ratio of Load Transistors for ZnO Inverter Applications

〇Jingye Xie1, Chuanlin Sun2, Qinyuan Wang1, Junchen Dong2, Dedong Han1,3, Xing Zhang1,4 (1. Peking Univ. (China), 2. Beijing Info. Sci. and Tech. Univ. (China), 3. Beijing Superstring Academy of Memory Tech. (China), 4. Peking Univ. Shenzhen Graduate School (China))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-10-15]Humidity-Tolerant Neuromorphic Olfactory Systems Based on Hardware-Deployable Spiking Neural Networks and SnOx Resistor-Type Gas Sensors

〇Donghee Kim1,2, Gyuho Yeom1,2, Woo Young Choi 1,2, Jong-Ho Lee1,2 (1. Department of Electrical and Computer Engineering, Seoul National University, Seoul, Republic of Korea (Korea), 2. Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, Republic of Korea (Korea))
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