2025 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10]10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Wed. Sep 17, 2025 1:30 PM - 2:10 PM JST
Wed. Sep 17, 2025 4:30 AM - 5:10 AM UTC
Room N (416+417, 4th Floor)
Session Chair: Toshiya Murakami (KIOXIA), Ryo Matsumura (NIMS)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-10-01]Impact of Microwave Annealing and Ar/O2 Plasma Treatment on the Electrical Performance and Stability of Solution-Processed IWO Thin-Film Transistors

〇Seong-Hwan Lim1, Seung-Jin Lee1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-10-02]High-Performance Submicron Independent Double-Gated Amorphous IGZO Thin-Film Transistors

〇Ching-Hsiang Chang1, Tsu-Yu Liao1, Chien-Wei Chen2, Cui-Chung Kei2, Guo-Wei Huang3, Pei-Wen Li1, Horng-Chih Lin1 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Taiwan Instrument Research Inst. (Taiwan), 3. Taiwan Semiconductor Res. Inst. (Taiwan))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-10-03]Yttrium-Doped Vanadium Pentoxide Films for Electrochemical Biomedical Sensing in Electrolyte-Insulator-Semiconductor Structure

〇Chun-Yen Yang1, Wei-Cheng Chen1, Yu-hong Yang1, Yen Su3, Ming-Ling Lee2, Hsiang Chen1 (1. National Chi Nan University (Taiwan), 2. Minghsin University of Science and Technology (Taiwan), 3. Chang Gung University (Taiwan))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-10-04]MOS Structure Based Characterization of NiO Thin Films Deposited by Oxygen-Controlled Magnetron Sputtering

〇Qiaoyu Hu1, Robert Sokolovskij2, Wenmao Li1, Wenchuan Tao1, Qing Wang1, Hongyu Yu1,2 (1. Southern Univ. of Sci. and Tech. (China), 2. Shenzhen Polytechnic Univ. (China))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-10-05]High-Performance In2O3/ZnO Heterojunction Thin-Film Transistors Fabricated by Low-Temperature Process

〇Xupeng Tian1, Ce Ning1, Jintong Miao1, Ruibin Duan1, Junchen Dong1, Dedong Han1, Xing Zhang1 (1. Peking Univ. (China))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-10-06]Preparation of In2O3 based transparent conductive material for deep UV device

〇Masaki Yasuda1, Takeya Daichi1, Murata Kotaro1, Jumpei Kamikawa1, Nobuhisa Fujima1, Hiroko Kominami1, Kazuhiko Hara1, Akihiro Yamaji2, Shunsuke Kurosawa2 (1. Shizuoka Univ. (Japan), 2. Tohoku Univ. (Japan))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-10-07]Hybrid-CMOS Inverter Comprising Poly-Ge and Oxide TFTs on Plastic Substrates

〇Akito Kurihara1, Toshiyuki Tsuchiya2, Tetsuo Okuyama2, Akito Hara1 (1. Tohoku Gakuin University (Japan), 2. TOYOBO CO., LTD. (Japan))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-10-08]High-Sensitivity Respiratory Monitoring and Diagnostic System Using Porous Ag2S Thin Films

〇Yu Hsuan Wu1 (1. NCUE (Taiwan))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-10-09]Defect-Suppressed α-MgGaO Thin Films for High-Performance
UV-C Photodetectors with Gain-Enhanced Mechanism

〇Chun-Chia Lin1, Chien-Sheng Cheng1, Hao-Chun Hung1, Shun-Cheng Shih1, Wen-Chao Liu1, Wei-Chou Hsu1 (1. National Cheng Kung University (Taiwan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-10-10]High-Performance Stable In2O3 Field-Effect Transistors by Atomic Layer Deposition Process

〇Ruibin Duan1, Ce Ning1, Jiakang Zhang2, Dunshan Yu1, Junchen Dong2, Dedong Han1, Xing Zhang1,3 (1. School of Integrated Circuits, School of Software and Microelectronics, Beijing Advanced Innovation Center for Integrated Circuits, Peking Univ. (China), 2. School of Info. & Communication Eng., Beijing Info. Sci. and Tech. Univ. (China), 3. Peking Univ. Shenzhen Graduate School (China))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-10-11]Process Variation-Tolerant Oxide Transistors with High Performance and Enhancement-Mode Operation via Indium Oxide/Yttrium Oxide Hetero-structure

〇Jinhong Park1, Jin-Hyuk Bae1, Do-Kyung Kim2 (1. Kyungpook National Univ. (Korea), 2. Kangwon National Univ (Korea))
1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-10-12]Characterization of NbTiN/HZO/NbTiN MIM Capacitors for high frequency AC Clock & Power Distribution Network for Superconducting Digital Circuits

〇Seifallah Ibrahim1, Blake Hodges1, Steven Brebels2, Julian Gil Pinzon1, Trent Josephsen1, Ankit Pokhrel2, Daniel Perez Lozano2, Yann Canvel2, Bart Kenens2, Amey Walke2, Gianpiero Maccarrone Lapi1, Sara Iraci2, Mihaela Popovici2, Benjamin Huet2, Quentin Herr1,2, Zsolt Tokei2, Anna Herr1,2 (1. IMEC USA Nanoelectronics Design Center, Inc (United States of America), 2. IMEC (Belgium))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-10-13]Low-Cost Fabrication of CuI/AgI Heterojunction Diodes Using a Solution-Based Ion Exchange Method

〇YI CHIA CHEN1, DER YUH LIN1, CHICHAO WANG1, CHIAHSUAN WU1, SHIHTIEN CHEN1, YUTAI SHIH1, HUNGPIN HSU2, SHENGBENG HWANG3 (1. The National Changhua Univ. of Edu. (Taiwan), 2. The Ming Chi Univ. of Tech. (Taiwan), 3. The Chienkuo Tech. Univ. (Taiwan))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-10-14]Compensation Technique for Modulating Threshold Voltage of High-Mobility InZnO/ZnO Heterojunction Transistors

〇Qinyuan Wang1, Ce Ning1, Junchen Dong2, Jingye Xie1, Dedong Han1, Jinlong Han Lin1, Xing Lin Zhang1 (1. Peking University (China), 2. Beijing Information Science and Technology University (China))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-10-15]Double-Layer Oxide Phototransistor for Neuromorphic Optical Synapses: Defect and Spectral Analysis

〇Minsu Seo1, Minjung Kim2, Nam Suji3, Yongcheol Jo4, Kwangsik Jeong2, Kwun-Bum Chung1 (1. Dongguk Univ. (Korea), 2. Yonsei Univ. (Korea), 3. Univ. of Science and Tech. (Korea), 4. Pusan National Univ. (Korea))
2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-10-16]Influence of Zr(NMe2)4 Admixute in CpZr(NMe2)3 on ZrO2 Thin Film Properties

〇Sangmin Lee1, Hyunki Kim2, Kwanhyun Park2, Hye-Lee Kim1, Won-Jun Lee1, Kyungsik Lee2, Jungwoo Park2, Jongwan Jung1, Seongmoo Oh1 (1. The Univ. of Sejong (Korea), 2. Hansol Chemical (Korea))
2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-10-17]Tunable Scavenging Effects of Al2O3 Passivation via Oxidant Selection for High-Performance Tellurium TFTs

〇Jaeyoon Shim1, Jaemin Jung1, Dahui Jeon1, Inhong Hwang1, Yoohyeon Jung1, In-Hwan Baek1 (1. Inha university (Korea))
2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-10-18]Electrical Performance Enhancement of p-Type SnO TFTs via Back-Channel Engineering with Fluorocarbon Plasma Treatment

〇Jaemin Jung1, Jaeyoon Shim1, Dahui Jeon1, Taek-Mo Chung2, Chee Won Chung1, In-Hwan Baek1 (1. Inha Univ. (Korea), 2. Korea Res. Inst. of Chemical Tech. (Korea))
2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

[SO-PS-10-19]BEOL-Compatible Self-Aligned Dual-Gate ALD InZnO TFT

〇Mengran Liu1, JiYe Li1, Yuhan Zhang1, Zhendong Jiang1, Shengjie Yang1, Xinwei Wang1, Shengdong Zhang1, Lei Lu1 (1. Peking Univ. (China))
2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-10-20]Oxygen vacancy mobility and charge de-trapping in 6 nm HZO-based ferroelectric capacitors as a function of annealing temperature

〇Lucía Pérez Ramírez1, Gunjan Yadav1, Nicholas Barrett1, Jean Coignus2, Nicolas Vaxelaire2, Laurent Grenouillet2, Andrea Locatelli3, Tevfik Onur Mentes3 (1. SPEC, CEA, CNRS, Université Paris-Saclay (France), 2. CEA-Leti, Université Grenoble-Alpes (France), 3. Elettra–Sincrotrone Trieste SCpA, Basovizza (Italy))
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