講演情報
[14a-K101-9]Coulomb-scattering-limited mobility at cryogenic temperatures due to interface charges induced by Fowler-Nordheim injection in Si n-MOSFETs
〇(M2)Zhao Jin1, Yutong Chen1, Hiroshi Oka2, Takahiro Mori2, Mitsuru Takenaka1, Kasidit Toprasertpong1, Shinichi Takagi1 (1.The Univ. of Tokyo, 2.AIST)
キーワード：
MOSFET、Cryogenic Operation、Mobility
Cryogenic MOSFETs have potential application in quantum computer systems, while the lack of an accurate physical model is a critical issue in cryo-CMOS circuits. Channel mobility is one of the most important parameters among a variety of MOSFET parameters and Coulomb scattering is known to be the main factor that determines mobility in Si MOSFETs at low temperatures and low carrier surface density. We characterized Coulomb-scattering-limited mobility by using Matthiessen's rule in a bulk Si n-MOSFET with different interface charges, intentionally generated by F-N injection. The Coulomb-scattering-limited mobility due to interface charges at 4 K has been found to be roughly proportional to NS1.5, which is consistent with a theoretical mobility calculation under the quantum limit.