講演情報
[14p-K103-8]A 300mm Silicon Spin Based Platforms for Quantum Computing
〇Stefan Kubicek1, Sofie Beyne1, Sugandha Sharma1, Shana Massar1, Clement Godfrin1, Bart Raes1, Arne Loenders1, Julien Jussot1, Yannick Hermans1, Yannan Li1, Yann Canvel1, Yuchao Jiang1, Shuchi Kaushik1, Yosuke Shimura1, Roger Loo1, George Simion1, Alexander Grill1, Sylvain Baudot1, Danny Wan1, Kristiaan De Greve1 (1.IMEC)
キーワード：
spin qubit、300mm processing
We present a comprehensive description of imec’s 300mm Si spin qubit integration platforms which we use to study the fundamental aspects of the qubits. The qubits process flow features either 3 levels of overlapping poly-Si or TiN gates, patterned either by 300mm e-beam or optical lithography and subtractive dry etch or only single level of poly-Si or TiN gates patterned by optical lithography. These are used to form the basic qubits building blocks, i.e. Quantum dots (QDs) and Single Electron Transistors (SETs). DUV optical lithography is used for Junction formation, patterning of TiN or Al antennas for Electron Spin Resonance (ESR) or Cobalt micromagnets for Electric Dipole Spin Resonance (EDSR) based spin control. Intentionally, no isolation scheme is used. To minimize the magnetic noise in the vicinity of the spin qubit, epitaxy processes were developed for 28Si and 28SiGe heterostructure which allow us to fabricate both 28SiMOS qubits in which the qubits are located directly at the SiO2/Si interface as well as 28SiGe devices in which electrons reside in the Si Quantum Well (QW) created by growing a thin 28Si layer between two 28SiGe strain relaxed layers.