講演情報
[14p-K210-6]Investigation of sputter-deposited BaS films for hole transport layer of BaSi2 thin film solar cells.
〇Ammara Firdous1, Takumi Sato1, Koki Hayashi1, Nurfauzi Abdillah1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)
キーワード：
BaSi2 solar cell、Point defects、hole transport layer (BaS)
To overcome the challenges of BaSi2 solar cells such as parasitic absorption at the surface due to large α and diffusion of impurities for p/n control, a new structural design , (Hole Transport Layer) HTL/n-BaSi2/ETL (Electron Transport Layer) has been proposed. HTL requires that the Eg be larger than BaSi2, and the ionization potential (IP) be close to BaSi2. BaS is considered to be a candidate material that satisfies these conditions, but research reports are quite limited . Therefore, in our study, we evaluated the basic physical properties of barium sulphur (BaS). The calculations of intrinsic defects in the BaS HTL layer will provide much further improvement. We also plan to deposit BaS films at higher substrate temperatures to characterize the crystalline BaS films.