講演情報
[14p-K302-8]First-Principles Prediction for the Role of Rashba Spin-Orbit Coupling in Voltage-Controlled Magnetocrystalline Anisotropy on Fe/MgO
〇(DC)Yosephine Novita Apriati1, Masato Tsuchida1, Kenji Nawa1, Kohji Nakamura1 (1.Mie Univ.)
キーワード：
Rashba Spin Orbit Coupling、Voltage Controlled Magnetocrystalline Anisotropy
The challenges in achieving higher density, higher speed, and lower energy magnetoresistive random access memory (MRAM) devices are primarily focused on attaining a voltage-controlled magnetocrystalline anisotropy (VCMA) coefficient greater than 1000 fJ/Vm and perpendicular magnetocrystalline anisotropy (PMA) exceeding 2 mJ/m². The origin of VCMA is mainly attributed to modifications of the occupied states and electric-field-induced changes in magnetic dipole moments. In metal/insulator systems, however, inversion symmetry breaking due to the contrasting electrostatic potential at the interface leads to Rashba spin-orbit coupling (SOC), which is odd in momentum k-space and can not be ignored. Here, we revisit and clarify the role of Rashba SOC in Fe/MgO-based magnetic tunnel junctions (MTJs), specifically for VCMA and PMA.