講演情報
[14p-K302-9]Cryogenic temperature deposition of a high-quality CoFe top-free layer for voltage-controlled magnetoresistive random-access memory
〇Tomohiro Ichinose1, Tatsuya Yamamoto1, Takayuki Nozaki1, Kay Yakushiji1, Shingo Tamaru1, Shinji Yuasa1 (1.AIST)
キーワード：
magnetic tunnel junction、cryogenic temperature deposition、perpendicular magnetic anisotropy
To implement a magnetoresistive random-access memory in practical devices, it is of great importance to develop high-quality top-free type magnetic tunnel junctions (MTJs). As the top-free layer, amorphous CoFeB has been used even though crystalline materials possess rich potential such as large bulk perpendicular magnetic anisotropy (PMA), half-metallic band structures, and high voltage-controlled magnetic anisotropy (VCMA) efficiency. The main reason for this comes from the difficulty in fabricating a high-quality crystalline ultrathin film on a MgO tunneling barrier. In this work, the high-quality crystalline CoFe top-free layer was developed using cryogenic temperature deposition and a Fe-substituted MgO (MgFeO) barrier.