講演情報
[14p-K503-2]Impurity reduction in atomic-layer-deposited Hf0.5Zr0.5O2 thin films using H2O2 as an oxidant to enhance the crystallization at low temperature
〇Haoming Che1, Takashi Onaya1, Masaki Ishii2, Hiroshi Taka2, Koji Kita1 (1.GSFS, The Univ. of Tokyo, 2.Taiyo Nippon Sanso)
キーワード：
ferroelectric material、atomic layer deposition、Hf0.5Zr0.5O2
The ferroelectricity of Hf0.5Zr0.5O2 (HZO) arises from its metastable orthorhombic (O) phase , making it essential to promote the O phase formation to achieve a large remanent polarization. During ALD process, when the reaction is not completed between precursor and oxidant, impurities such as carbon and nitrogen may remain in HZO films, which may affect the crystallinity of the film. We investigated the influence of ALD oxidant gas of H2O2, known as a stronger oxidant compared to the conventional oxidant of H2O, on the impurity level and crystallization of ALD-HZO films.