講演情報
[14p-P02-7]Enhanced Photoelectrochemical Performance Using Nanostructured Tungsten Oxide Thin Films Deposited by Pulsed Laser Deposition
〇(D)Qi Xue1, Shogo Kodate1, Shin Kajita1 (1.The Univ. of Tokyo)
キーワード：
semiconductor、thin film、photoelectrochemical
With the rising demand for sustainable energy, hydrogen has gained attention as a clean fuel. Photoelectrochemical (PEC) water splitting is particularly promising for its efficiency and eco-friendliness. Tungsten oxide, with its optimal band gap and excellent charge transport properties, stands out as a highly promising electrode material.
Previous research has shown that helium plasma irradiation on tungsten surfaces can produce a porous nanostructure known as "fuzz", which has been demonstrated to significantly enhance the PEC performance of tungsten oxide.
Recent advancements indicate that tungsten films deposited via pulsed laser deposition (PLD) in room temperature in an argon atmosphere can also develop fuzz-like nanostructures. This approach presents a cost-effective and more controllable alternative to helium plasma irradiation. In this study, the PEC water-splitting performance of fuzz-like nanostructures fabricated using the PLD method was systematically examined. Also, high temperature deposition and heterojunction fabrication are used to further enhance the PEC performance of the sample.
Previous research has shown that helium plasma irradiation on tungsten surfaces can produce a porous nanostructure known as "fuzz", which has been demonstrated to significantly enhance the PEC performance of tungsten oxide.
Recent advancements indicate that tungsten films deposited via pulsed laser deposition (PLD) in room temperature in an argon atmosphere can also develop fuzz-like nanostructures. This approach presents a cost-effective and more controllable alternative to helium plasma irradiation. In this study, the PEC water-splitting performance of fuzz-like nanostructures fabricated using the PLD method was systematically examined. Also, high temperature deposition and heterojunction fabrication are used to further enhance the PEC performance of the sample.
コメント
コメントの閲覧・投稿にはログインが必要です。ログイン