講演情報
[14p-P03-15]Impact of oxygen partial pressure on defects properties in sputtered vertical NiOx/β-Ga2O3 heterojunction diodes
〇(DC)Yun Jia1, Yui Sasaki1, Ryo Morita1, Kota Nakano1, Aboulaye Traore2, Hironori Okumura1, Takeaki Sakurai1 (1.Univ. of Tsukuba, 2.Sorbonne Paris Nord Univ.)
キーワード：
Ultra Wide bandgap semiconductor、Deep level transient spectroscopy、Ga2O3
In this study, NiOx/β-Ga2O3 HJDs were fabricated by sputtering NiOx using a metallic Ni target, which is more cost-effective than a ceramic NiO target. Sputtering was chosen due to its versatility, enabling precise control over film properties by adjusting deposition parameters such as oxygen partial pressure. NiOx layers were deposited at various oxygen partial pressures (20%, 30%, 40%, and 50%) to study the influence of oxygen content on the defect properties of the heterojunction.