講演情報
[14p-P10-22]Fabrication of FeFET with ferroelectric AlScN film and In2O3 channel
〇JiaHong Lin1,2, TingTzu Kuo1,2, SiMeng Chen1, Hirofumi Nishida1, An Li1, Takuya Hoshii1, Hitoshi Wakabayashi1, TingChang Chang2, Kuniyuki Kakushima1 (1.Institute of Science Tokyo, 2.National Sun Yat-sen University)
キーワード：
ferroelectric、AlScN、In2O3