[14p-P10-1~25] 次世代半導体創生に向けた研究・人財育成活動シンポジウム

英語発表

[14p-P10-5] Tunnel magnetoresistance in magnetic tunnel junctions with a metastable cubic GaN barrier

〇Hyeokjin Kwon^1,2, Kenya Suzuki^1,2, Kumar Deepak², Masafumi Tsujikawa³, Tufan Roy⁴, Masafumi Shirai^3,4, Shigemi Mizukami^2,4 (1.Tohoku Univ., 2.WPI-AIMR, 3.RIEC, 4.CSIS)

キーワード：

spintronics、MTJ

We studied magnetic tunnel junctions (MTJs) with a metastable cubic GaN (001) for a tunnel barrier. The X-ray diffraction measurements suggested the formation of the metastable cubic GaN (001) in the MTJs. We observed the relatively high magneto-resistance (MR) ratio of about 75% in the MTJs. We will present the GaN thickness dependence of the MR ratio and the resistance area product in the presentation and discuss the effect of GaN layer in detail.