講演情報
[15a-K301-3]Contact Doping of MoS2 Monolayer by PPh3 Dopant Molecule
〇(P)Puneet Jain1, Kosuke Nagashio1, Daisuke Kiriya1 (1.University of Tokyo)
キーワード：
Molybdenum Disulfide (MoS2)、Doping、Thin-film transistor
In the present work, we try to do contact doping (doping between metal electrodes and MoS2 monolayers (ML)), which may be a promising method to reduce contact resistance. The dopant material used is an asymmetrical molecule, which has a lone-pair of electrons, that helps in doping. We fabricated devices with contact doping, by changing the dopant concentration below metal electrodes. It has been found that ON current (ION) and threshold voltage (VTH) are affected by the dopant concentration, below the metal electrodes.