講演情報
[15a-K301-4]Contact-Engineered MoS2 Memristor for Mimicking Brain-Inspired Synaptic Plasticity
〇(P)Elamaran Durgadevi1, Ryoichiro Naoi1, Masahiro Sakai1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
キーワード：
Neuromorphic、Memristor、2D materials
Contact engineering for MoS2 memristors aims to achieve a non-destructive and uniform switching process by enhancing doping near the contacts. This approach helps in modulating the Schottky barrier at the active electrode, ensuring more reliable and consistent device performance. Unlike traditional methods that often compromise performance due to defects or unintended doping effects, molecular doping enables tuning of the Schottky barrier through selective charge injection, preserving structural integrity and outperforming conventional techniques such as phase transformation or metal deposition. In this work, Gold(III) chloride (AuCl3) is introduced to promote p-type doping in n-type MoS2 contacts while minimizing structural disruptions. By utilizing the electron-withdrawing properties of AuCl3, the Schottky barrier is significantly modulated, enabling robust switching behavior for neuromorphic computing. This approach generates localized electronic states within the bandgap, enabling stable high- and low-resistance states through charge trapping.The introduction of AuCl3 lowered the Fermi level closer to the valence band and increased the trapped states in the band gap of MoS2, resulting in a pronounced hysteresis effect. A sequence of applied positive/negative drain pulses induces rapid exponential changes in the post synaptic current (PSC), replicates the potentiation/depression behavior. PSC increases with positive VD pulses, accelerating with larger amplitudes. After 50 pulses, PSC shows enhanced response to higher VD, highlighting memristor's ability in emulating spike amplitude dependent plasticity (SADP)